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CYStech Electronics Corp.
Small Signal Schottky diode
Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : Page No. : 1/3
RB751V-40S2
Description
Planar silicon Schottky barrier diode encapsulated in a SOD-323 plastic SMD package.
Features
*Small surface mounting type SC-76/SOD323 *Low reverse current and low forward voltage *High reliability
Applications
Low current rectification and high speed switching
Symbol
RB751V-40S2
Outline
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature Tstg .................................................................................................... -40~+125C Junction Temperature Tj .............................................................................................................. +125C * Maximum Voltages and Currents (Ta=25C) Peak Reverse Voltage VRM..................................................................................... 40 V DC Reverse Voltage VR ...................................................................................................................... 30 V Mean Rectifying Current IO ........................................................................................................... 30 mA Peak Forward Surge Current IFSM......................................... ..............................................200 mA
RB751V-40S2
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Characteristic Forward Voltage Reverse Leakage Current Capacitance Between Terminals Symbol VF IR CT IF=1mA VR=30V VR=1V, f=1MHz Condition Min. -
Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : Page No. : 2/3
Typ 2
Max. 370 0.5 -
Unit mV A pF
Characteristic Curves
Forward Current Derating Curve
120 Percentage of Rated Forward Current---(%) 100 80 60 40 20 0 0 25 50 75 100 125 150 0.01 0 0.1 0.2 0.3 0.4 0.5 Ambient Temperature---TA() 100
Forward Current vs Forward Voltage
Forward Current---I F(mA)
M ounting on glass epoxy PCBs
T yp. pulse measurement 10 125 1 75 0.1 25 - 25
Forward Voltage---VF(V)
Reverse Leakage Current vs Reverse Voltage
100
Capacitance vs Reverse Voltage
10 Capacitance between terminals---C T(pF)
Reverse Leakage Current---IR(A)
10
T a= 125 T a= 75
f=1MHz Ta=25
1
0.1 T a= 25 0.01 Typ. pulse easurement 0.001 0 10 20 30 Reverse Voltage---VR(V) Ta=-25
1 0 2 4 6 8 10 12 14 Reverse Voltage---VR(V)
RB751V-40S2
CYStek Product Specification
CYStech Electronics Corp.
SOD-323 Dimension
Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : Page No. : 3/3
Marking:
K A
1 2
5H 5E
B D
Style: Pin 1.Cathode 2.Anode 2-Lead SOD-323 Plastic Surface Mounted Package, CYStek Package Code: S2
H
J
E
C
*: Typical
DIM A B C D
Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157
Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40
DIM E H J K
Inches Min. Max. 0.0060 REF 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063
Millimeters Min. Max. 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70
Notes: 1.Controlling dimension : millimeters.
2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
RB751V-40S2
CYStek Product Specification

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